ЭФФЕКТ ПОГЛОЩЕНИЯ СВЕТА НА ЭЛЕКТРОФИЗИЧЕСКИЕ ХАРАКТЕРИСТИКИ СОЛНЕЧНЫХ ЭЛЕМЕНТОВ
Keywords:
Solar cells, Copper-Selenium Indium-Gallium CIGS, light absorption, carrier concentration, efficiency, Useful work coefficient (FIK), Volt-ampere characteristic (VAX)Abstract
Light absorption on the parameters of solar cells with the ZnO structure: Al/i-ZnO / CdS/CuIn1-xGax (S, Se) 2 / Mo after reverse bias. Analysis of the experimental data showed that the effect of light absorption is opposite to the effect of reverse bias and can almost completely compensate for it over time. At the same time, the recovery of the open circuit voltage in a solar cell with a normal buffer layer thickness requires more time than in a solar cell with a thin buffer layer.
References
M.N. Ruberto, A. Rothwarf, Time‐dependent open‐circuit voltage in CuInSe2/CdS solar cells: Theory and experiment. J. Appl. Phys. 61 1987 4662.
Zabierowski, P., Rau, U., & Igalson, M. (2001). Classification of metastability’s in the electrical characteristics of ZnO/CdS/Cu (In,Ga)Se2 solar cells. Thin Solid Films, 387(1-2), 147–150. doi:10.1016/s0040-6090(00)01850-2
Th. Meyer, M. Schmidt, F. Engelhardt, J. Parisi, U. Rau, A model for the open circuit voltage relaxation in Cu (In,Ga)Se2 heterojunction solar cells. Eur. Phys. J. AP 8 (1) 43-52 (1999), DOI: 10.1051/epjap:1999228
